Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
Publication date: 18th December 2016
We present a new strategy of perovskite films preparation for optoelectronic applications in particular solar cells using melts of novel reactant compounds and lead precursors The new reactant exhibits very low melting points and high chemical activity and selectivity. Being liquid at room temperature it renders superfluous the use of a solvent in the conversion reaction.
Using this radically new approach we demonstrate that a thin film of metallic lead can be converted at once in a single step into polycrystalline perovskite films of high electronic quality at room temperature. The reaction between the metallic lead film and the newfound compounds proceeds rapidly without using any solvents or additional agents. Depending on the preparation conditions, two types of morphology are obtained, including sphere-like and cubic crystals of perovskite. The latter case gives high quality perovskite films with large crystals exhibiting intensive photoluminescence and a lifetime of charge carriers above 200 ns.
The advantage of the proposed method is the use of lead or other precursors as initial compounds while lead can be deposited by highly controlled way using a large number of standard techniques such as sputtering, galvanostatic deposition, etc. on different substrates, including flexible ones.
We also show that mixed perovskites MAxFA1-xPbI3-xBrx can also be easily obtained using this strategy. In particular, single-phase MA-stabilized FAPbI3 with long charge carriers lifetimes was obtained. Moreover, the proposed new strategy is not limited to the treatment of metallic lead and opens, for the first time, an access to a new field of efficient methods of perovskite preparation and other classical melt techniques which are well known for semiconductors.
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