High-performance, hysteresis free, ambipolar hybrid perovskite based field-effect transistors
Noelia Devesa Canicoba a b, Kasun Fernando c, Jean-Christophe Blancon a, Fangze Liu a, Laurent Le Brizoual b, Regis Rogel b, Jacky Even d, Bruce W. Alphenaar c, Wanyi Nie a, Aditya D. Mohite a
a Materials Physics and Applications Division, Los Alamos National Laboratory, US, Los Alamos, United States
b Institute of Electronics and Telecommunications of Rennes (IETR), UMR CNRS 6164, University of Rennes 1, Rennes, France
c Department of Electrical Engineering, University of Louisville, Louisville, KY 40292, USA
d Fonctions Optiques pour les Technologies de l’Information (FOTON), Institut National des Sciences Appliquées (INSA) de Rennes, CNRS, UMR 6082, Rennes, France
nanoGe Perovskite Conferences
Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
Perovskite Photonics and Optoelectronics (PEROPTO18). 1st March
Rennes, France, 2018 February 27th - March 1st
Organizers: Jacky Even and Sam Stranks
Oral, Noelia Devesa Canicoba, presentation 089
DOI: https://doi.org/10.29363/nanoge.abxpvperopto.2018.089
Publication date: 11th December 2017

Hybrid perovskites are solution processed crystalline materials with excellent electronic and optical properties, which enables high-efficiency optoelectronic devices. However, hybrid perovskites-based field effect transistor operation at room temperature has remained elusive. This is due to the non-reproducibility induced by polar nature of the structure coupled with ionic motions, which screens the capacitively coupled gate voltage. In this study, we report high-performance, hysteresis-free ambipolar FETs using highly crystalline hybrid perovskites thin films, operating at room temperature. We systematically improved the film quality, the effect of high-K dielectrics between the perovskites and gate. As a result, we obtained FETs with high trans-conductance with low subthreshold slopes leading to an on/off ration >104. Moreover, we achieve ambipolar transport at room temperature that strongly correlates to the choice of the gate-dielectric, that allow to tune the Fermi energy of perovskites for electrons and holes injections. We anticipate these results will open up the systematic investigation on the electronic properties in hybrid perovskites materials, for the opportunities to discover novel devices functionalities such as ultrasensitive photo-transistors and spin FETs.

 

 

 

 

 

 

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