Long-lived Hot-carrier Emission and Large Blue Shift in the Thin Film of FASnI3
Hong-Hua Fang a, Sampson Adjokatse a, Shuyan Shao a, Jacky Even b, Maria Loi a
a University of Groningen, The Netherlands, Nijenborgh, 4, Groningen, Netherlands
b Fonctions Optiques pour les Technologies de l’Information (FOTON), Institut National des Sciences Appliquées (INSA) de Rennes, CNRS, UMR 6082, Rennes, France
NIPHO
Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
Perovskite Thin Film Photovoltaics (ABXPV18). 27-28 Feb
Rennes, France, 2018 February 27th - March 1st
Organizer: Jacky Even
Oral, Hong-Hua Fang, presentation 096
DOI: https://doi.org/10.29363/nanoge.abxpvperopto.2018.096
Publication date: 11th December 2017

Slowed photoexcited carrier cooling is highly desirable for developing hot-carrier solar cell, as it allows potential efficiency close to the thermodynamical limit in ideal conditions. Here, the optoelectronic properties of FASnI3 as a function of excitation density and temperature are investigated. Hot-carrier light emission in tin-based hybrid perovskite (FASnI3) with lifetime > 1 nanosecond is observed. An unusual large blue shift of the time-integrated photoluminescence with increasing the excitation power (150 meV at 24 K, and 75 meV at 293 K) is displayed. On the basis of an analysis of energy- and time-resolved photoluminescence, these phenomena are likely associated with slow hot carrier relaxation and state-filling of band edge states. Noteworthy, we measured highly efficient hot carrier emission also under continuous-wave excitation, which is a fundamental step towards hot carrier solar cells. The observation of these phenomena provides important physical insight into the relatively unexplored excited-state character of tin halide perovskites, which is essential for the further development of lead-free solar cells and other optoelectronic devices based on hot carriers.

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