Comparative Study of differently processed Tin Oxide Layers in regular perovskite solar cells
Philipp Tockhorn a, Ganna Chistiakova a, Mathias Mews a, Lars Korte a, Steve Albrecht b, Bernd Rech a
a Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, DE, Berlin, Germany
b Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Young Investigator Group Perovskite Tandem Solar Cells, Berlin, Germany
NIPHO
Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
Perovskite Thin Film Photovoltaics (ABXPV18). 27-28 Feb
Rennes, France, 2018 February 27th - March 1st
Organizer: Jacky Even
Poster, Philipp Tockhorn, 110
Publication date: 11th December 2017

Tin oxide (SnOx) is a commonly used electron transporting material (ETM) in n-i-p (so called “regular”) perovskite solar cells which enables high open circuit voltages (>1.1 V). In addition, low process temperatures render SnOx a good choice for the application in monolithic silicon-perovskite tandem solar cells in which the silicon heterojunction bottom cell prohibits high process temperatures.

 

In this study, compact layers of SnOx processed from a wet-chemistry approach and via atomic layer deposition were investigated with regard to their performance in regular perovskite solar cells. For this, we deposit the differently processed SnOx as ETM onto indium tin oxide (ITO) coated glass substrates and employ a mixed cation, mixed halide perovskite absorber, a doped Spiro-OMeTAD layer as hole transporting material (HTM) and an Au electrode. Moreover, we characterize the optical and electrical material properties of SnOx layers as well as differences in chemical composition and link those properties to the different performances in perovskite solar cells.

By that we find that in the wet-chemistry process, annealing temperature and layer thickness are critical parameters to the overall cell performance. An increase in annealing temperature from 180°C to 200°C yields an absolute efficiency increase of 2%. Current-voltage measurements on this configuration show a power conversion efficiency of 16.7 % and open circuit voltages up to 1.17 V. A major limitation in this configuration is the relatively moderate fill factor of 68 %.

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