Vapor Deposition of Lead Free Double Perovskites
Martina Pantaler a, Christian Fettkenhauer a, Irina Anusca a, Doru C. Lupascu a
a University of Duisburg-Essen, Carl-Benz-Str. 199, Duisburg, Germany
b Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE))
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster 007
Publication date: 7th November 2016

Recently, bismuth-based lead-free double perovskites like Cs2AgBiBr6 have been considered as alternatives to the emerging lead-based perovskites for solar cell applications. Organic–inorganic lead halide perovskite absorbers have excellent photovoltaic properties, such as suitable bandgap, high optical absorption, and long carrier lifetimes [1]. The underlying issues are the presence of toxic lead and their instability under ambient atmosphere (e.g., O2 and H2O). Trivalent cations, such as Bi3+, along with monovalent cations, such as Ag+, have concurrently been introduced on the B-sites of halide perovskites, leading to B cation double perovskites with the general chemical formula of A2B’B’’X6. Recently, bismuth-based lead-free double perovskites like Cs2AgBiBr6 have been considered as alternatives to the emerging lead-based perovskites for solar cell applications. The compound crystallizes in a cubic structure, where the rock-salt arrangement of B cations is energetically favored, primarily because of the large charge difference between monovalent and trivalent B cations [3]. These Pb-free double perovskites have been reported to have long carrier recombination lifetime, [3] good stability against air and moisture, [3] and low carrier effective masses [4].                    

In our work, we report on the physical vapor deposition of a halide double perovskite, Cs2AgBiBr6. We compare single, dual, and triple source vapor deposition processes and explore the optoelectronic properties of the resulting films.  

References

[1] A. Kojima, K. Teshima, Y. Shirai, T. Miyasaka, J. Am. Chem. Soc. 2009, 131,6050–6051.

[2] A. H. Slavney, T. Hu, A. M. Lindenberg, H. I. Karunadasa, J. Am. Chem. Soc. 2016, 138, 2138–2141.

[3] M. Anderson, K. Greenwood, G. Taylor, K. Poeppelmeier, Prog. Solid State Chem. 1993, 22, 197–233.

[4] G. Volonakis, M. R. Filip, A. A. Haghighirad, N. Sakai, B. Wenger, H. J. Snaith, F. Giustino, J. Phys. Chem. Lett. 2016, 7, 1254–1259.



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