Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
DOI: https://doi.org/10.29363/nanoge.hopv.2018.043
Publication date: 21st February 2018
High band gap semiconducting metal oxide films have been widely used as charge extraction layers in organic solar cells over two decades. However, these oxides suffer from high resistivity and can therefore only be included as very thin layers in the solar cells. In order to increase layer thickness and thus processing robustness without sacrifying performance, increase in conductivity can be reached by creating metal vacancies and doping with some elements. [1] Recent works were dedicated to doping of n-type metal oxides such as ZnO demonstrating that doping leads not only to robust processing, but also to improved air processibility [2], device performance as well as color tuning of the solar cells [3].
Here, we focus on the development of doped p-type metal oxide semiconductor nanocrystals for solution-processing of hole transporting layers applied in both normal and inverted device structures. Amongst the large variety of metal oxides used, we focus on doped NiOx and WOx using different dopants (Li, Cu, and Sn). We applied these materials to high efficiency polymer solar cells using both fullerene and non-fullerene acceptors. The impact of the doping on the performance, air and thick layer processing will be discussed.
1. Matsubara, K., Huang, S., Iwamoto, M., Pan, W. Nanoscale 6, 688–692, (2014).
2. Prosa et al., ACS Appl. Mater. Interfaces 8, 1635–1643, (2016).
3. Gaceur et al., Adv. Funct. Mater. 26, 243–253, (2016).
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