2-D perovskite material based metal-insulator-semiconductor light-emitting devices
Hye min Oh a, Hobeom Jeon a, Ngoc Thanh Duong a, Chulho Park a, Dae Young Park a, Mun Seok Jeong a
a Sungkyunkwan University, South Korea, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440, Korea, Republic of
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Benidorm, Spain, 2018 May 28th - 31st
Organizers: Emilio Palomares and Rene Janssen
Poster, Hye min Oh, 288
Publication date: 21st February 2018

Convensional organic inorganic hybrid perovskite materials have attracted attention for new generation of optoelectronic and electronic devices because their direct band gaps, high absorption coefficients and high internal quantum efficiencies. However, slow free electron hole radiative recombination and poor stability limit the application for high performance perovskite t light-emitting devices (LED.) Recently, a two-dimensional (2D) perovskite has attracted much attention because it is more stable against moisture and light and has a larger band gap than a three-dimensional perovskite. Furthermore, nowadays, van der Waals materials such as graphene and hexagonal boron nitride (hBN) are deeply studied for the ultra-thin flexible electronic devices. Here, we report a 2D perovskite LED based on a metal insulator semiconductor (MIS) structure consisting of graphene, hBN and 2D perovskite. Optical characterization with photoluminescence, absorption, and Raman scattering data for confirming the successful fabrication will be presented and electrical measurement data also will be provided.

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