Driftfusion: An Open Source Code for Simulating Ordered Semiconductor Devices with Mixed Ionic-Electronic Conducting Materials in One-Dimension
Phil Calado a, Ilario Gelmetti b, Piers Barnes a
a Department of Physics, Imperial College London, United Kingdom
b Institute of Chemical Research of Catalonia (ICIQ), Barcelona Institute of Science and Technology (BIST), Avinguda dels Països Catalans, 16, Tarragona, Spain
Proceedings of International Conference on Electrocatalysis for Energy Applications and Sustainable Chemicals (EcoCat)
Online, Spain, 2020 November 23rd - 25th
Organizers: Ward van der Stam, Marta Costa Figueiredo, Sixto Gimenez Julia, Núria López and Bastian Mei
Poster, Ilario Gelmetti, 049
Publication date: 6th November 2020
ePoster: 

Here we introduce Driftfusion, a model originally developed for simulating the complex behaviour of lead-halide perovskite solar cells and nowadays expanded to simulate various kind of opto-electronic devices with both electronic and ionic mobile species.

The model has recently been released as open source [1] and is now a versatile simulation tool available to the scientific community.

Driftfusion simulates the time evolution of one-dimensional ordered semiconductor devices with mixed ionic-electronic conducting layers. It enables users to model devices with multiple, distinct, material layers and up to four charge carrier species: electrons and holes by default plus up to two ionic species and their interaction with light and applied voltage. The materials’ interfaces can be tuned independently (e.g. increasing recombination rates) and the system equations can be manually edited for introducing reactivity between species (by default, just photo-generation, recombination, drift and diffusion are included).

Complex transient, sweep (e.g. CV, see [2] for the simulation of hysteresis in perovskite solar cells) and periodic (e.g. EIS, see [3] for the simulation of giant apparent capacitance and negative capacitance in perovskite solar cells) optoelectronic device measurement protocols can be simulated.

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