High Efficiency Inorganic CsPbBrI2 Perovskite Solar Cell via Iodine Salts Optimized Interface
Jingru Zhang a, Shengzhong Liu a
a Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; School of Materials Science & Engineering, Shaanxi Normal University, Xi’an, 710119, P. R. China.
nanoGe Perovskite Conferences
Proceedings of International online conference on Hybrid materials and optoelectronic devices (HYBRIDOE)
Online, Spain, 2020 December 15th - 17th
Organizers: Xueqing Xu, Baomin Xu, Hin-Lap (Angus) Yip and Xinhua Zhong
Oral, Jingru Zhang, presentation 047
DOI: https://doi.org/10.29363/nanoge.hybridoe.2020.047
Publication date: 4th December 2020

The inorganic CsPbBrI2 perovskite has attracted ever-increasing attention for its outstanding optoelectronic properties and ambient phase stability. However, to achieve high power conversion efficiency (PCE), it is imperative to minimize recombination at interface between the CsPbBrI2 and the hole-extraction layer (HEL) for maximized carrier extraction efficiency. Herein, we developed the AI treatment to provide a general method for optimizing the interfacial properties. In our present work, quantum-dots (QDs) were firstly used to form dimension-graded heterojunction structure with the CsPbBrI2 perovskite bulk film for optimized energy alignment in the solar cell (PSC) structure. Then, we ventured to conduct interface engineering by post treatmentment of the CsPbBrI2 perovskite film with a series of A-site cation based iodine salts (AI, where A = formamidinium (FA+), methylammonium (MA+), ethylenediamine (EDA+), phenylethylammonium (PEA+) or n-butylammonium (BA+)) to achieve further improved device performance. In the applied QDs/film structure, an ultra-thin iodine-ion-enriched perovskite layer was formed on the top of CsPbBrI2 film, and QDs surface were proved capped with AI after AI salt post-treated. We found such a phenomenon leads to proper band edge bending, decreased surface defects, and high-quality QDs modified layer. As a consequence, these changes proved effectively decreased recombination loss with improved hole extraction efficiency. More specifically, the FAI treated device yields an ultra-high PCE of 14.12% which positioning above the best reported PCE for CsPbBrI2 PSCs to date. We believe such strategy should have significant potential for future applications in other optoelectronic devices.

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