Proceedings of International online conference on Hybrid materials and optoelectronic devices (HYBRIDOE)
Publication date: 4th December 2020
Transition metal dichalcogenides (TMDs) such as SnS2, MoS2 are the suitable materials for optoelectronic devices, due to their interesting physical properties and usually achieved via CVD methods. To improve the produced charge carriers under light illumination, proposing heterostructure design should be benefit if the energy levels of two structures are proper. In this case the halide perovskite which combines several facilities of high charge carrier mobility, effective light absorption and cost-effective solution process fabrication, should be proper choices. As the sensor networks for Internet of Thing (IoT) need detection system without external power supply, the self-power photodetectors are necessary. So in this research, we proposed, the self-driven planar and large scalable SnS2/ perovskite photodetector has been proposed based on the impedance matching between contact-separated triboelectric nanogenerators (TENGs) system produced by tapping the kapton layer on the FTO as well as tapping the hand on the FTO substrate. The planar photodetector has been fabricated through vertically SnS2 nanosheets grown on the FTO through modified CVD in junction with three cationic perovskite Cs0.05(FA0.83 MA0.17)0.95Pb (I0.83 Br0.17)3 layer. Due to, photoelectric effect, the internal resistance of the device decreases by light illumination and consequently the current of the circuit enhances. The most variation of the ( I-I0/I0) , responsivity and detectivity parameters are about 10.6, 45 mA/W and 6.4 ×109 Jones, respectively , under 36mW/cm2of the white incident light.
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