Proceedings of NFA-Based Organic Solar Cells: Materials, Morphology and Fundamentals (NFASC)
DOI: https://doi.org/10.29363/nanoge.nfasc.2021.004
Publication date: 25th January 2021
The rapid development of new organic solar cell material systems creates the need for quick and easy characterization of the major loss mechanisms. A key factor limiting the performance of organic solar cells is bimolecular recombination,[1, 2] which is frequently characterized by light-intensity dependent measurements of the short-circuit current.[3-5] The analysis is based on a zero-dimensional model, which predicts a sublinear relation between the light intensity and the short-circuit current in the presence of bimolecular recombination as opposed to the strictly linear relation in the ideal case or for non-geminate, monomolecular recombination. While previous works have already discussed that a linear correlation can also be compatible with substantial amounts of bimolecular, direct recombination,[2, 6] we go further beyond the zero-dimensional approximation. Here, we present the analysis of the influence of direct recombination and trap-assisted recombination via deep defect states and exponential band tails on the light-intensity dependence of the short-circuit current with numerical drift-diffusion simulations. The simulations reveal that a sublinear relation can occur for both direct and trap-assisted recombination caused by spatial redistribution of charge carriers, light-intensity dependent trapped charge-carrier densities and, in the case of thick devices, by space-charge effects.[7] Some of these cases cannot be explained by a simple, zero-dimensional device model and therefore highlight the need to understand the microscopic effects to correctly interpret the light-intensity dependent short-circuit current measurements.
T.K. and P.H. acknowledge funding by the Helmholtz Association.
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