A Solvent free Route for Halide Perovskite Film Processing Based on Pressure Treatment of Perovskite Powders
Maximilian Schultz a, Nico Leupold b, Ralf Moos b, Fabian Panzer a
a Soft Matter Optoelectronics, Department of Physics, University of Bayreuth, Bayreuth 95440, Germany
b Functional Materials, University of Bayreuth, Universitätsstraße 30, Bayreuth, 95440, Germany
nanoGe Fall Meeting
Proceedings of nanoGe Fall Meeting19 (NGFM19)
#RadDet19. Radiation Detection Semiconductors Materials, Physics and Devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Mahshid Ahmadi and Germà Garcia-Belmonte
Oral, Fabian Panzer, presentation 300
DOI: https://doi.org/10.29363/nanoge.ngfm.2019.300
Publication date: 16th July 2019

Even though hybrid perovskites have undergone a remarkable development within the last years, state of the art processing approaches such as solution processing or evaporation suffer from an intrinsically high complexity, as the actual perovskite crystallization and its film processing happen simultaneously and are inextricably interconnected.

Here we present an alternative, entirely dry processing approach, which decouples perovskite crystallization and film formation, by using readily prepared perovskite powders and produce films by appropriate mechanical pressure treatment. We show how a mechanochemical synthesis approach by ball milling allows to produce a wide range of phase pure and exceptionally stable hybrid perovskite powders with a high flexibility in processing and address the impact of milling parameters on the powder properties. Using these powders, we demonstrate how the used pressure and the powder microstructure, i.e. particle size and stoichiometry affect the mechanical stability, compactness and surface roughness of the pressed layers. We further address how specific temperature treatment during the pressing step can improve the properties of the pressed layer, and show their capability to be used in perovskite based optoelectronic devices, such as X-Ray detectors.

© Fundació Scito
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