On the Photoelectrical Properties of Maipbi2 Perovskites Thin Films
Mihaela Girtan a, Romain Mallet b
a Photonics Laboratory, (LPhiA) E.A. 4464, SFR Matrix, Université d’Angers, Faculté des Sciences, 2 Bd Lavoisier, 49000 Angers, France
b SCIAM, Université d’Angers, 49000 Angers, France
nanoGe Fall Meeting
Proceedings of nanoGe Fall Meeting19 (NGFM19)
#PERInt19. Interplay of composition, structure and electronic properties in halide-perovskites
Berlin, Germany, 2019 November 3rd - 8th
Organizer: Pablo P. Boix
Poster, Mihaela Girtan, 329
Publication date: 16th July 2019

MAIPbI2 thin films were deposited by spin coating in one step method from a solution containing MAI and PbI2 dissolved in a mixture of DMF and DMSO. The X-ray diffraction investigations indicate the formation of the cubic phase, or a mixture between cubic and tetragonal for thicker films. For compact films the absorption is high over the whole spectrum from UV to IR range, the transmission being lower than 20%. From electrical point of view, films are highly sensitive to light. A decrease of the electrical resistivity with three order of magnitude is noticed when films are exposed to a white light irradiation of a solar simulator with an intensity of 1000W/m2, but also an important decrease is also observed when films are exposed to a continuous low intensity ambient light, with a decrease of the electrical resistivity, in this case with at least one order of magnitude. The relaxation photoconduction time was calculated from photoconduction measurements.

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