The Progress on Solution-Processed Metal Halide Perovskites for Nuclear Radiation Detection in NPU
Yadong Xu a b
a Key Laboratory of Radiation Detection Materials and Devices,
b 2State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
nanoGe Fall Meeting
Proceedings of nanoGe Fall Meeting19 (NGFM19)
#RadDet19. Radiation Detection Semiconductors Materials, Physics and Devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Mahshid Ahmadi and Germà Garcia-Belmonte
Invited Speaker, Yadong Xu, presentation 354
Publication date: 16th July 2019

The recent rapid demand for large-volume X-ray and γ-ray spectrometers and imaging arrays have triggered tremendous opportunities in the field of nuclear medicine, astronomy and high energy physics, industrial on-line monitoring and national security. The large mobility and carrier lifetime of perovskite crystals and the high atomic numbers of heavy metals (Pb/Bi/Te/Sn), I and Br make them ideal materials for X-ray and γ-ray detection [1-2]. Here, we report centimeter-sized detector-grade APbBr3 (A=Methylammonium, Cs) perovskite crystals grown using solution method [3, 4]. The resulting single crystals exhibited high resistivity and mobility lifetime products (μτ). The X-ray sensitivity of 529 μC·Gyair-1cm-2 and 1256 μC Gy-1cm-2 were achieved for MAPbBr3 and CsPbBr3 detectors, respectively, under 80 kVp X-ray at an electric field of 50-200 V·cm-1. Besides, the CsPbBr3 detectors show the capability to detect 241Am @ 5.49 MeV α particles, with an energy resolution of ~3%. Simultaneously, for the 241Am @ 59.5 keV γ-ray response, the full energy peak was resolved with good peak discrimination. In addition, we demonstrate a potential candidate the 0-D perovskite material Cs2TeI6 grown by electrostatic assisted spray (E-spray) deposition, as a sensitive all-inorganic X-ray photoconductor for direct photon-to-current conversion X-ray detectors. The electrospray apparatus can be readily automated and fully integrated with the existing display systems based on TFT or CMOS, which will help to implement and scale up this device for manufacturing next generation of flat panel X-ray imagers.

 

References:

[1] Wei, H.; Fang, Y.; Mulligan, P.; Chuirazzi, W.; Fang, H.-H.; Wang, C.; Ecker, B. R.; Gao, Y.; Loi, M. A.; Cao, L.; and Huang, J. Nat. Photonics, 2016, 10, 333-339.

[2] Stoumpos, C. C.; Malliakas, C. D.; Peters, J. A.; Liu, Z.; Sebastian, M.; Im, J.; Chasapis, T. C.; Wibowo, A. C.; Chung D. Y.; and Freeman A. J. Cryst. Growth Des. 2013, 13, 2722-2727.

[3] Zhang, H.; Liu, X.; Dong, J.; Yu, H.; Zhou, C.; Zhang, B.; Xu, Y. Cryst. Growth Des. 2017, 17, 6426-6431.

[4] Liu, X.; Zhang, H.; Zhang, B.; Dong, J.; Jie, W.; and Xu Y. J. Phys. Chem. C, 2018, 122 (26), 14355-14361.

 

 

This work was supported by the National Natural Science Foundations of China (Nos. 51872228 and U1631116). Project was also supported by the National Key Research and Development Program of China (2016YFE0115200) and the Natural Science Basic Research Plan in Shaanxi Province of China (2019ZDLGY04-07).

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