Optimizing Light and Current Management in α-SnWO4, a New Photoanode Material
Markus Schleuning a, Patrick Schnell a, Moritz Kölbach a, Fatwa Firdaus Abdi a, Yifat Piekner b, Daniel Grave b, Avner Rothschild b, Roel Van de Krol a, Dennis Friedrich a
a Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-    Meitner-Platz 1, 14109 Berlin, Germany
b Department of Materials Science and Engineering, Technion – Israel Institute of Technology, Haifa, 3200003, Israel
nanoGe Fall Meeting
Proceedings of nanoGe Fall Meeting19 (NGFM19)
#SolFuel19. Solar Fuel Synthesis: From Bio-inspired Catalysis to Devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Roel van de Krol and Erwin Reisner
Poster, Markus Schleuning, 423
Publication date: 18th July 2019

For efficient solar water splitting a low cost, stable photoanode is still missing. α-SnWO4 is a recently found candidate, that gained attention due to an ideal band gap of 1.9 eV and a flat band potential near zero Volt vs. RHE. The introduction of a hole-conducting NiOx protection layer lately lead to a large increase in stability and a new benchmark sulfite oxidation photocurrent of 0.75 mA cm-2 [1-4].

Still, a mismatch between the charge carrier diffusion length and light penetration depth is one of the main limiting factors in realizing higher photoconversion efficiencies. Combining photocurrent action spectra and electro-optical modeling the thicknesses of the active and inactive layers within the stack can be further optimized, potentially leading to higher photocurrents. Therefore, the optical constants of all materials are determined by means of ellipsometry and the resulting values are validated by spectrophotometer measurements. Then absorption, transmission and reflection of all layers is determined.  At the same time IPCE measurements, in front and back illumination geometry, for different film thicknesses provide further insights into the charge transport within the SnWO4. Finally, the pathway towards a modeling of the spatial collection efficiency is described [5] aiming at a high-resolution depth profile of the full device functionality.

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