Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
Publication date: 18th December 2016
Photovoltaics (PV) using tin halide perovskites as the light harvesting material have not yet benefitted from the same intensive research effort that has propelled lead perovskite PVs to >20% power conversion efficiency for three reasons: (i) the susceptibility of tin perovskites to oxidation in air.; (ii) the low energy of defect formation; and (iii) the difficultly in forming pin-hole free films, the latter two of which seriously undermine device fill-factor. This talk will report two distinct findings relating to the advancement of CsSnI3 perovskite PV: (1) A new strategy for fabricating CsSnI3 based PV devices with high fill factor that removes both the requirement for an electron blocking layer at the hole-extracting electrode and the need for an additional processing step to minimise the density of pinholes in the perovskite film.; (2) Demonstration that the stability of unencapsulated CsSnI3 PV devices based on a simplified electron-blocking layer free device architecture is improved by at least an order of magnitude as compared to lead based perovskite PV with the same architecture when tested under continuous simulated solar illumination in ambient air at 50oC.
(1) Nature Energy 1, Article number: 16178 (2016) DOI:10.1038/nenergy.2016.178
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