Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
DOI: https://doi.org/10.29363/nanoge.abxpvperopto.2018.059
Publication date: 11th December 2017
The low power conversion efficiency (PCE) of tin based perovskite solar cells (HPSCs) is mainly attributed to the high background carrier density due to a high density of intrinsic defects such as Sn vacancies and oxidized species (Sn4+) that characterize Sn-based HPSCs. Herein, we report on the successful reduction of the background carrier density by more than one order of magnitude by depositing near-single-crystalline formamidinium tin iodide (FASnI3) films with the orthorhombic a-axis in the out-of-plane direction. Using these highly crystalline films, obtained by mixing a very small amount (0.08 M) of layered (2D) Sn perovskite with 0.92 M (3D) FASnI3, we achieve for the first time a PCE as high as 9.0% in a planar p-i-n device structure. These devices display negligible hysteresis and light-soaking, as they benefit from very low trap-assisted recombination, low shunt losses and more efficient charge collection. This represents a 50% improvement in PCE compared to the best reference cell based on a pure FASnI3 film using SnF2 as a reducing agent.
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