Photosensitive diode characteristics of thick CH3NH3PbI3 layers on TCO substrates 
Ryo Ichii a, Masashi Ikegami a, Tsutomu Miyasaka a
a Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, 2258503, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster 022
Publication date: 7th November 2016

Perovskite solar cells, in which methyl ammonium lead iodide (CH3NH3Pbl3) is used as the photoactive layer, can be fabricated by simple and inexpensive solution processes.  A lot of attention has been drawn by these solar cells in the recent years because of their high power conversion of efficiencies (PCE), surpassing 20%. Such high efficiency of the perovskite solar cells can be ascribed to favorable semiconductor properties of CH3NH3Pbl3 that are materialized through uniform and dense films.  Although its application in solar cell has gained major attraction, the material also finds other interesting applications such as photo detectors, light emitting diodes, X-ray detectors, memory resistors, etc. In this study, we examined methods for fabricating patterned perovskite layer with a thickness of 100 μm or higher.First, we synthesized single crystal of CH3NH3PbI3 by an inverse temperature recrystallization method. Then, the crystals were grinded to powder, which was dissolved in the γ-butyrolactone (GBL). The solution was then dripped and dried on the FTO glass and the process was repeated to obtain thick perovskite films.The 100 um thick perovskite layer thus prepared showed uniquephotoconductive properties due to the bulk large crystal of perovskite.



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