Publication date: 23rd February 2022
Developing materials that can lead to compact versions of artificial neurons (neuristors) and synapses (memristors) is the main aspiration of the nascent field of neuromorphic materials research. Oscillating circuits are of interest as neuristors, as they may be used to emulate the firing of action potentials. Here we present devices fabricated from epitaxial thin films of semiconducting TbMnO3 that self-oscillate at room temperature. We show that the Negative Differential Resistance (NDR) regime that we observe in these devices, orginates from the promotion of electrons across the electronic band gap of the semiconductor caused by Joule heating. The intrinsic nature of the mechanism governing the oscillations gives rise to a high degree of control and repeatability. Obtaining such properties in an epitaxial perovskite oxide opens the way towards combining such self-oscillating properties with those of other piezoelectric, ferroelectric, or magnetic perovskite oxides in order to achieve hybrid neuristor-memristor functionality in compact heterostructures.
We acknowledge the financial support of the CogniGron research center and the Ubbo Emmius Funds (University of Groningen).
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