Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO22)
DOI: https://doi.org/10.29363/nanoge.nipho.2022.017
Publication date: 11th November 2021
The orthorhombic gamma-phase of CsPbI3 is the photoactive Perovskite (PSK) with the simplest stoichiometry to be used in tandem with Silicon Solar Cells. It has an energy gap of ~1.75-1.78 eV, well complementing the absorption range of a Silicon. In addition, it is a fully inorganic Perovskite that does not suffer from degradation through the formation of volatile species, and indeed the risk of mass loss during operation or during ageing is intrinsically prevented.
Nonetheless, bottlenecks on the use of gamma-CsPbI3 are the formation temperature that requires fast quenching from 320 °C and the intrinsic instability towards its non-photoactive yellow delta-polymorphism, both of which deserve special attention.
Herein, the convenient interplay between Eu incorporation and morphology to form the gamma-phase of CsPbI3 at 80 C (LT) is unveiled. In contrast, pure CsPbI3 without Eu is a mixture of gamma-phase and non-PSK delta-phase at 65 C or it is a fully delta-phase at 80 C.
Based on experimental and theoretical findings, we argued about a double beneficial role of Eu. On one hand, it assists in the formation of the gamma-phase either by substituting Pb or by occupying interstitial positions in the CsPbI3 lattice. On the other hand, it indirectly promotes the formation of a fine-grained layer at LT wherein the high surface-to-volume ratio makes the establishment of the delta-phase unfavourable. Strain accommodation in the fine-grained matrix and the formation of a gluing intergrain-self-material during the kinetics of reaction (snowplow effect) cooperate in extending the lifetime of the LT gamma-phase to ~40 h at 65 C compared to only ~10–15 min in the sample without Eu for the complete phase transformation.
The disclosed phenomena draw a method for the stabilization of the gamma-CsPbI3 phase that can be further exploited or improved,
The project was par- tially supported by the bilateral project on PSK Solar Cells (CUP B56C18001070005), cofounded by CNR (Italy) and JSPS (Japan). CNR gratefully acknowledges the project PON entitled “Tecnologia per celle solari bifacciali ad alta Ef!cienza a 4 terminali per utility scale,” called BEST-4U, !nanced by the Italian Ministry MIUR (CUP B88D19000160005). Computer resources were provided by the Swiss National Supercomputing Centre (CSCS) under Projects ID s869 and s963. The authors thank Prof. Stefan Goedecker from University of Basel (CH) for its valuable support.
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