Proceedings of nanoGe Spring Meeting 2022 (NSM22)
DOI: https://doi.org/10.29363/nanoge.nsm.2022.132
Publication date: 7th February 2022
Hybrid perovskites have generated a lot of interest in the field of photovoltaics during the past decade. In recent years, perovskite solar cells regularly output over 20 % of photoconversion efficiency, approaching conventional Silicon based devices.
Even though, remarkable optoelectronic properties of hybrid perovskites and easy fabrication routs have enabled fast development of devices, the common fabrication methods still result in formation of substantial density of defect states in hybrid perovskite thin films [1]. These defects when act as charge trapping centers, have been known to induce non-radiative losses and limit the maximum photoconversion efficiency of perovskite solar cells [2]. The progress in fundamental understanding of these defects, in particular about their formation sites and their exact impact on device efficiency, has been slower. Such knowledge, however, is critical to design successful passivation strategies and improve performance and viability of perovskite photovoltaic devices.
Here we elucidate the very origin of nanoscale defects that form in state-of-the-art solution processed triple cation mixed halide perovskite thin films, and evaluate their roles in charge trapping processes. We employed photoemission electron microscopy to directly image the distribution of defects on nanoscale [3] and revealed their spatial arrangement with respect to surface morphology. By adding the time resolution to our photoemission experiments, we accessed the exact roles of these defects in performance of perovskite thin films by monitoring charge trapping processes that occur at defect sites. We thus uncovered the presence of multiple types of nanoscale defect clusters, and found that depending on their origin, they play very different roles in photoexcited hole trapping – from very detrimental to relatively benign [4]. Our results highlight the need to develop targeted approaches to remove each undesired type of defect.
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