Rapid Triplet Harvesting by Radical Emitters
Sebastian Gorgon a, Qinying Gu a, Alexander Romanov c, Feng Li d, Richard Friend a, Emrys Evans b
a Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, UK
b Swansea University, Department of Chemistry, Singleton Park, Swansea SA2 8PP, UK, Swansea, United Kingdom
c School of Chemistry, the University of Manchester, Oxford Road, Manchester, UK, Manchester, United Kingdom
d State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Spring Meeting 2022 (NSM22)
#OrgFun22. Behind the Device: Fundamental Processes in Organic Electronics
Online, Spain, 2022 March 7th - 11th
Organizers: Jose Manuel Marin Beloqui, Claudia Tait and Emrys Evans
Contributed talk, Sebastian Gorgon, presentation 296
DOI: https://doi.org/10.29363/nanoge.nsm.2022.296
Publication date: 7th February 2022

Spin doublet radical organic semiconductors can show near unity luminescence yield from their lowest energy excited state and are attractive as the emissive component in organic light-emitting diodes (OLEDs). [1]

Here I will present our recent measurements of direct, rapid, spin-allowed energy transfer from triplet excitons generated within a closed-shell organic host to a doublet chromophore. We use a carbene-metal-amide (CMA-CF3) as a model host, since following photoexcitation it undergoes extremely fast intersystem crossing to set up a population of triplet excitons within a few picoseconds. We track the subsequent energy transfer to the TTM-3PCz radical using transient absorption and temperature-dependent transient photoluminescence spectroscopies. These show that direct triplet-to-doublet energy transfer is the dominant channel that accounts for over 90% of all radical emission. OLEDs based on the CMA-CF3:TTM-3PCz blend show improved device characteristics compared to TTM-3PCz radical OLEDs without triplet-enhanced energy transfer.

Our design overcomes triplet-imposed performance limits for optoelectronics by activating spin-allowed triplet-doublet transfer on picosecond–nanosecond timescales, with light emission obtained orders of magnitude faster than derived from conventional triplet(-singlet) management technologies.

This method allows photophysical studies to reflect the mechanisms "Behind the Device" by mimicking spin statistics present under electrical charge injection, which may be a powerful tool for the wider organic electronics community.

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