Publication date: 19th April 2024
Metal halide perovskites are being increasingly investigated for photodetector applications, both for UV-Vis-NIR and for ionizing photon detection. Among other types, photoconductors consisting of metal-semiconductor-metal structure offer simple fabrication, compatibility with thin films and single crystals, and most importantly high EQE and therefore responsivity, due to gain. While widely applied in the preparation of perovskite detectors, their device structure, use of interlayers and in general the geometrical characteristics of perovskite photoconductors has been poorly discussed. In this work we shed light on geometrical characteristics of planar photoconductors based on interdigitated electrodes, highlighting the importance of using channel length and width to maximize responsivity and limit of detection. These findings are applied to different perovskites, all prepared by vacuum deposition methods. We also explore vertical thin film photoconductors, which have been much less studied up to know. Here we discuss the importance of the
semiconductor thickness and the use of interlayers in order to maximize gain while maintaining low the dark current, which represents the noise level of the sensor.
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