Whereabouts of recombination in Perovskite Solar Cells
Anta Juan A a, Idigoras Jesus a, Todinova Anna a, Salado Manuel a, Contreras Lidia a, Ahmad Shahzada b
a Pablo de Olavide University, Sevilla, Spain, Carretera de Utrera, km. 1, Montequinto, Spain
b Abengoa Research, Abengoa,, C/Energía Solar n° 1, Campus Palmas Altas, 41014 Sevilla, Spain
NIPHO
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
València, Spain, 2017 March 1st - 2nd
Organizers: Hendrik Bolink and David Cahen
Oral, presentation 052
Publication date: 18th December 2016

The success of metal halide perovskite solar cells stems from a very high absorption coefficient combined with a relatively low recombination rate. The slow recombination leads to experimental open-circuit voltages close to the thermodynamic limit. Despite the fact that this property is inherent to the perovskite material, the choice of selective contacts (electron and hole transporting layers) is critical to achieve high voltages according to experimental evidence. In this work we investigate the recombination kinetics using temperature-dependent voltage measurements and small-perturbation optoelectronic techniques. The recombination resistance and the open-circuit voltage are measured for two excitation wavelengths (blue and red light), two illumination directions (back and front) and at different temperatures. The influence of two perovskite compositions (MAPbI3 and FAPbI3)0.85(MABr3)0.15) and two hole selective layers (Spiro-OmeTAD and P3HT) have been studied. Our results point to a recombination process controled by the bulk of the perovskite layer via a trap-limited mechanism. The effect of the hole transporting layer and the relative contribution of surface recombination is also discussed



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