Characterization of perovskite photovoltaic cells with capacitance spectroscopy
Yasuhiro Shirai a, Kenjiro MIYANO a, Masatoshi Yanagida a, Dhruba Khadka a
a GREEN, NIMS, 1-2-1 Sengen, Tsukuba, 305-0047, Japan
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
València, Spain, 2017 March 1st - 2nd
Organizers: Henk Bolink and David Cahen
Invited Speaker, presentation 070
Publication date: 18th December 2016

In inorganic semiconductor junction devices, capacitance spectroscopy is one of the most fundamental means to uncover the defect states and the doping concentrations. Of course, it has been already applied to perovskite photovoltaic (PKPV) devices as well, providing the energy levels and densities of the trap states. However, the technique has not been fully utilized to enhance the understanding of the PKPV operation. For example, a comparative study of the information on the defect states and the power conversion efficiency is still lacking.

The formulation of the capacitance spectroscopy is well developed and should be readily applicable to planar type PKPVs. We have been successful in preparing simple planar type PKPVs, which are free of hysteresis and have diode characteristics quantitatively comparable with those of GaAs p-i-n junctions. We applied the capacitance spectroscopy to our samples prepared under systematically varied conditions, e.g., samples prepared in different procedures or samples at different stages of degradation. It was found that the efficiency is related to the bulk defect conditions while the degradation leaves stronger signature at the perovskite/charge-extraction layer interface. Numerical simulations using SCAPS (Solar Cell Capacitance Simulator) were performed assuming defect states in the bulk or at the interface. The resulting macroscopic electronic properties are qualitatively in agreement with the observation.

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