Halide perovskite solar cells for all-thin film tandem devices
Ayodhya N. Tiwari a, Christian Andres a, Enrico Avancini a, Stefano Pisoni a, Thomas P. Weiss a, Thomas Feurer a, Fan Fu a, Stephan Buecheler a
a EMPA - Swiss Federal Laboratories for Materials Science and Technology, Überland Strasse, 129, Dübendorf, Switzerland
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
València, Spain, 2017 March 1st - 2nd
Organizers: Henk Bolink and David Cahen
Invited Speaker, Stephan Buecheler, presentation 074
Publication date: 18th December 2016

The concept of polycrystalline all-thin-film multi-junction photovoltaic devices has been proposed for long time to revolutionize the solar energy harvesting by offering very high efficiencies at low production costs. Until recently successful development was hindered by rather low efficiency and/or low sub-bandgap transmittance of the wide band gap top cell(s). With the discovery and incredibly fast progress of halide perovskite-based solar cells the situation has changed considerably and the development of polycrystalline all-thin-film multi-junction devices is worth revisiting. In this contribution the combination of wide band gap perovskite top cells with low band gap chalcogenide bottom cells is discussed and different device configurations are presented. In particular the architecture of semi-transparent halide perovskite top cells grown in “inverted” p-i-n substrate configuration where light enters the solar cell from the film side will be shown. This device configuration not only allows direct (monolithic) growth onto the Cu(In,Ga)Se2 bottom cell but additionally also permits the development of flexible perovskite devices on non-transparent substrate materials. Substrate configuration perovskite solar cells with efficiency above 16% (MPP measurement) and average sub-bandgap transmittance >80% are achieved. Light soaking mechanism with implications for further device optimization as well as thermal and photo-stability properties will be presented for devices in substrate configuration. In combination with Cu(In,Ga)Se2 bottom cells tandem efficiencies above 22% are realized.

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