Publication date: 15th May 2025
III–V quantum dots (QDs), particularly InP-based systems, have shown great promise for display technologies, with recent advances enabling red and green InP/ZnSe/ZnS QDs exhibiting near-unity photoluminescence quantum yield (PLQY) and narrow emission linewidths. However, achieving efficient and stable blue emission (<485 nm) remains a significant challenge due to the instability of ultrasmall InP QDs and surface-related non-radiative losses. To overcome this, we employ a molten salt-based cation exchange approach to synthesize In₁₋ₓGaₓP QDs, enabling bandgap tuning via alloying gallium while preserving the direct bandgap character. Coupled with a rigorously oxygen-free ZnS shelling protocol, we achieved blue emission centered at 470 nm with a narrow linewidth of 38 nm and ~40% PLQY. Subsequent optimization of surface chemistry—using pre-shelling GaF₃ treatments and post-synthetic zinc carboxylate ligands—further enhanced PLQY to ~65%. Preliminary LED devices demonstrated external quantum efficiencies up to 0.2% and brightness of ~1100 cd/m². Ongoing work focuses on enhancing shell quality, refining surface chemistry, and scaling up the synthesis to enable high-efficiency blue QD LEDs.
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