Publication date: 15th May 2025
Shape control in colloidal III-V semiconductor nanocrystals, such as InAs and InP quantum dots, provides a powerful approach to tailor their optoelectronic properties. By precisely tuning synthesis parameters—including ligand selection, reaction kinetics, and precursor chemistry—nanocrystal morphology can be carefully controlled, selectively exposing crystal facets and minimizing surface defects. In this talk, I will highlight recent strategies developed in our group, emphasizing facet-specific reactivity, optimized surface passivation, and controlled precursor manipulation. In particular, modulation of pnictogen precursors through controlled redox chemistry allows refined morphological and compositional precision. Moreover, incorporating Zn significantly enhances surface passivation, reducing trap densities and improving photophysical stability. Special attention will be given to elucidating the relationships among nanocrystal morphology, surface chemistry, and key optoelectronic characteristics, including charge-carrier dynamics, trap state management, and optical absorption.
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