Publication date: 15th May 2025
CQDs are utilized in light-emitting technology due to some advantageous features compared to organic molecules, such as band gap engineering by tuning size and composition, and narrower spectral width. For visible emissions, CQD LEDs have already a technological impact; In principle, inorganic CQD are also the best possible soluble chromophores in the infrared, and they are an opportunity to extend the emission of solution processed LEDs into the infrared (IR) region.
In particular, the 3 – 5 um range in the electromagnetic spectra is known as the mid-IR region. This is the ‘molecular fingerprint’ region, relevant to environmental monitoring, industrial gas sensing, and defense. At present, the CQDs-based light-emitting diodes (LEDs) are based on interband (between conduction band and valence band) recombination, and this approach strongly limits the materials that can be used in the mid-IR region.
Shen et al. recently showed intraband electroluminescence at 5 microns, from HgSe/CdS and CdSe CQDs, along with a novel “cascade” excitation mechanism. The intraband transitions of CQDs vastly expends the library of CQD materials with mid-IR optical transitions. Moreover, the intraband transitions will allow many CQD systems such as RoHS compliant mid-IR chromophores. Some of these materials, such as InAs and InSb have relatively low conduction band minimum, which should facilitate unipolar electron transport and cascade emission. The poster covers the CQD synthesis of InAs and InSb, the film fabrication, the spectroelectrochemistry, and the survey of their mid-infrared intraband transitions as a function of electrochemical potential, size, and surface chemistry.
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