Publication date: 15th May 2025
Photonic applications of semiconductor quantum dots (QDs) had significant drawbacks due to their ultrafast Auger decay of multiple excitons. These non-radiative processes have hindered the performance of devices that requires high excitation. The emergence of the colloidal quantum well (QW) architecture, where a semiconductor quantum shell with an inverted QD geometry, has suppressed Auger recombination. QW morphology, where the quantum confined CdSe, HgS or CdHgSe layer is sandwiched between two broad bandgap domains (i.e. CdS, ZnS), leads to ultra-long biexciton lifetime and large biexciton quantum yields owing to the large exciton volume. Moreover, architecture-induced exciton-exciton repulsions have led to the splitting of exciton and biexciton optical transitions, which resulted in broad optical gain bandwidths. High single and biexciton lifetimes and long single exciton gain lifetime have rendered this geometry a worthy candidate for developing optically or electrically pumped gain media and X-Ray scintillators.
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