Origin of the Chiral Optical Properties in nanostructured π-SnS Films
Matthew Dake a, Bryce Sadtler a, Rohan Mishra a, Jiang Luo a
a Washington University in St. louis
Poster, Matthew Dake, 101
Publication date: 15th May 2025

Chiral semiconductors are gaining scientific interest due to their asymmetric interactions with light and electrons. Such systems absorb and emit right- and left-handed circularly polarized light (R- and L-CPL) in different amounts and exhibit the chiral-induced spin selectivity (CISS) effect, leading to many potential applications for optoelectronic devices. This work focuses on the differential absorption of R- and L-CPL of π- tin (II) sulfide, a metastable phase of SnS which crystallizes in a Sohncke space group: P213. We synthesized nanostructured thin films of π-SnS, which exhibit dissymmetry factors exceeding 0.1, by using a chiral complexing agent during aqueous chemical bath deposition. The observed chiroptical activity is likely due to the combination of residual chiral complexing agent remaining on the film surface, the chiral nanostructuring of crystallites in the film, and enantiomorphic excess of the crystallites in the film. Our current work aims to separate and quantify the effects of these three sources of chiroptical activity on the observed optical properties of the films.

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