Publication date: 15th May 2025
Metal nitrides represent a large class of materials with extensive applications in optoelectronics, energy technologies, catalysis, coatings for tools and medical implants, and composites. The rigidity and covalency of metal-nitrogen bonds impose the requirement for high temperatures needed to synthesize defect-free nitride crystals. As a result, the synthesis of colloidal nitride nanocrystals is particularly challenging and mostly unsuccessful because organic solvents and surfactants decompose at the temperatures far below those required for metal nitride synthesis. We report a general approach to high-temperature solution synthesis of colloidal metal nitride nanocrystals by reacting metal halides dissolved in molten inorganic salts with NH3 at an elevated pressure. NH3 pressure universally allows controlling the reaction product morphology by stabilizing colloidal nitride nanocrystals against aggregation and sintering. Successful syntheses of colloidal nanocrystals of binary nitride phases, including TiN, VN, GaN, NbN, Mo2N, Ta3N5, W2N, as well as ternary TixV1-xN nanocrystals, are demonstrated. These materials expand the scope of important semiconductors, superconductors, plasmonic materials, and catalysts available in form of solution-processable colloidal nanocrystals.
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