Imaging and Modelling Halide Perovskite Optoelectronic Devices
Samuel Stranks a b
a Department of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, United Kingdom
b Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge, United Kingdom
Proceedings of Applied Light-Matter Interactions in Perovskite Semiconductors 2021 (ALMIPS2021)
Online, Spain, 2021 October 5th - 7th
Organizers: Rafael Sánchez Sánchez and Miguel Anaya
Invited Speaker, Samuel Stranks, presentation 018
DOI: https://doi.org/10.29363/nanoge.almips.2021.018
Publication date: 23rd September 2021

Halide perovskites are poised to realize the next generation of inexpensive yet high-performance optoelectronic devices, yet our understanding of key photophysical processes is still emerging. Here, I will cover our group's latest work on understanding photons in and photons out of these fascinating semiconductors, as well as the recombination processes occurring in between. I will cover our efforts on neat films as well as integrated perovskite/silicon tandem cells, perovskite/perovskite tandem cells and LEDs, covering both modelling and experimental imaging. I will cover important effects including light coupling between multi-layered stacks and non-radiative recombination processes. These efforts are pushing forward our understanding and leading to new strategies to optimise performance. 

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