Intensity-Modulated Electroluminescence Spectroscopy: A Novel Technique to Characterize Internal Processes of Optoelectronic Devices
Agustin O. Alvarez a, Elena Mas-Marzá a, Francisco Fabregat-Santiago a
a Institute of Advanced Materials (INAM), Universitat Jaume I, Avinguda de Vicent Sos Baynat, s/n, Castelló de la Plana, Spain
Proceedings of Applied Light-Matter Interactions in Perovskite Semiconductors 2021 (ALMIPS2021)
Online, Spain, 2021 October 5th - 7th
Organizers: Rafael Sánchez Sánchez and Miguel Anaya
Poster, Agustin O. Alvarez, 027
Publication date: 23rd September 2021

In recent decades, there has been a great advance in the characterization of the electronic processes that take place in all kinds of optoelectronic devices. Impedance Spectroscopy (IS) has proven to be especially useful in identifying and analyse these electronic processes when they appear at different time scales. However, in certain cases processes such as charge transport and accumulation, radiative recombination and nonradiative recombination may produce similar impedance responses, thus leading to a misinterpretation of the electronic mechanism of the device when using IS for the characterization. In this work, we present Intensity-Modulated ElectroLuminescence Spectroscopy (IMELS) as a novel technique to characterize optoelectronic devices, being particularly useful to decipher the nature of the working mechanisms by their association with light emission. IMELS consist of applying either a voltage or a current perturbation over a steady-state condition and measure the corresponding electroluminescence response. We present here one experimental application of IMELS for the analysis of a commercial LED. By combining IMELS and IS analysis, in the same steady-state, we could attribute the low-frequency response to a nonradiative recombination process. In addition, we expose the relationship between IMELS and the differential quantum efficiency (EQELED-Diff). This finding is a step forward in the understanding of the working mechanisms of optoelectronic devices in general, that help to identify the main limitations of light emission and paves the way for further optimizations of these systems.

The authors acknowledge funding from the European Union’s Horizon 2020 MSCA Innovative Training Network under grant agreement No 764787. The authors want to acknowledge Ministerio de Economía y Competitividad (MINECO) from Spain under project, ENE2017-85087-C3-1-R.

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