Perovskite solar cells hysteresis simulation using Heiman-Warfield trapping model implemented in Silvaco Atlas
Takaya Kubo a, Hiroshi Segawa a, Ludmila Cojocaru a, Samy Almosni a b, Debin Li c, Satoshi Uchida d
a Departement of general systems studies Graduate school of arts and sciences, 3-8-1, Komaba, Meguro-ku, Tokyo, 153-8902, Japan
b SILVACO, 2-2-1 Minatomirai, Nishi-ku, Yokohama-shi, Kanagawa 220-8136, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Samy Almosni, 002
Publication date: 7th November 2016

The perovskite solar cells (PSCs) are promising candidates to reach the highest efficiency among the single junction solar cells due to the adapted bandgap around 1.55 eV, strong absorption and carrier diffusion length. To increase the PSCs efficiency, real origin of the I-V hysteresis became a big issue and has been discussed widely. In this study, we have modeled the hysteresis in the I-V curves of PSC by two dimensional modeling using the Silvaco Atlas software. The simulations has been done using a planar structure made of glass, fluorine doped tin oxide (FTO), compact titanium oxide (c-TiO2), methyl ammonium lead tri-iodide (MAPbI3), 2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spiro-OMeTAD-bifluorene (spiro-OMeTAD) and gold. We have studied the effect of trap assisted charge accumulation in c-TiO2 and recombination at the c-TiO2 / MAPbI3 interface. On the one hand this study shows that those two processes can reproduce the hysteresis behavior as function of the scan rate and voltage preset in perovskite solar cells. On the other hand this study suggests that to reduce hysteresis and improve the efficiency of PSCs one should decrease charge trapping and recombination at the c-TiO2 / MAPbI3 interface.

References :

[1] L. Cojocaru, S. Uchida, P. V. V. Jayaweera, S. Kaneko, J. Nakazaki, T. Kubo, H. Segawa, Chem. Lett. 2015, 44, 1750–1752.

[2] H. J. Snaith, A. Abate, J. M. Ball, G. E. Eperon, T. Leijtens, N. K. Noel, S. D. Stranks, J. T.-W. Wang, K. Wojciechowski, W. Zhang, J. Phys. Chem. Lett. 2014, 5, 1511–1515.

[3] W. Tress, N. Marinova, T. Moehl, S. M. Zakeeruddin, M. K. Nazeeruddin, M. Grätzel, Energy Environ. Sci. 2015, 8, 995–1004.

[4] F. P. Heiman, G. Warfield, IEEE Trans. Electron Devices 1965, 12, 167–178.

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