Electrlical Properties of Thin TiO2 Prepared with TiCl4 Treatment for Perovskite Solar Cells
Takashi Funaki a, Takurou Murakami a, Tetsuhiko Miyadera a, Masayuki Chikamatsu a, Said Kazaoui a, Hiroshi Segawa b, Ludmila Cojocaru b
a National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Takurou Murakami, 026
Publication date: 7th November 2016

In this work, we discussed about the interface between perovskite and electron transport layer (ETL) to improve the performance of the perovskite solar cells (PSCs) with reducing the energy loss at the material interfaces in the PSCs.              The TiCl4 treatment for the compact TiO2 layer to increase the performance of PSC has been reported. The effect of the TiCl4 treatment was considered as the cause of the wettability increases of the precursor solution of the perovskite on TiO2 compact layer and the efficient charge transport from perovskite layer to TiO2 layer. However, TiCl4 treatment may change the conduction band edge (CBE) potentials. The adjustment of the CBE potentials will be important issue to obtain the low barrier potentials for electron transfer from perovskite to TiO2 compact layers. To study the effect of the TiCl4 treatment on the CBE potentials, we prepared the electrochemical cells with the iodide and tri-iodide redox electrolyte and treated substrate with TiCl4 aqueous solution and the relation between open circuit voltages (Voc) and the electron density in TiO2 layer of the cells were measured with the charge extraction methods. The Voc as the quasi CBE potential was negatively shifted with the TiCl4 treatment but positively shifted with heating after TiCl4 treatment. We compared the PSCs performance as the different heating temperature at 150 °C, 300 °C, and 450 °C of the TiCl4 treated compact TiO2 layers. The Voc was decreased and the short circuit current was increased with increasing the temperature. The highest PCE was obtained with the heating at 300 °C.

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