Effects of Post-synthesis Thermal Conditions on Methylammonium Lead Halide Perovskite
Daehan Kim a, Byungha Shin a
a Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea, Korea, Republic of
b Department of Physics, Ewha Womans University, 52, Ewhayeodaegil, Seodaemungu, , Seoul, 3760, Korea, Republic of
c Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA, United States
d IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA, United States
e Molecular Foundry, Lawrence Berkeley National Laboratory, California 94720, USA, United States
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Daehan Kim, 036
Publication date: 7th November 2016

We studied the effects of post-synthesis thermal treatments on material properties of CH3NH3PbI3 perovskite films and their photovoltaic performance focusing on fundamental material properties. Perovskite thin films with different annealing duration showed different grain morphology and film quality confirmed by scanning electron microscope (SEM) and XRD. Kelvin probe force microscopy revealed the existence of a positive potential barrier at grain boundaries, which is known to be beneficial by suppressing carrier recombination. The height of the barrier increased with the annealing duration, which directly correlated with the device performance. The origin of the potential barrier appeared to be chemical inhomogeneity as revealed by Nano-Auger electron spectroscopy. Qualitatively similar temperature-dependence of current-density vs bias characteristics were observed regardless of the annealing duration, where efficiency collapsed at low temperatures due to a diverging series resistance. The freeze-out of free carries and/or a Schottky-type barrier(s) at the interface(s) is likely responsible for the diverging series resistance. 

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