Evaluation of energy level diagram of HC(NH2)2PbI3 single crystal by electrical and optical analysis
Takeyuki Sekimoto a, Michio Suzuka a, Tomoyasu Yokoyama a, Ryusuke Uchida a, Takashi Sekiguchi a, Kenji Kawano a
a Panasonic Corporation, 1006 Kadoma, Kadoma, Osaka 571-8501, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Takeyuki Sekimoto, 039
Publication date: 7th November 2016

  Formamidinium lead iodide perovskite (FAPbI3; FA+ = HC(NH2)2+) single crystal with a bandgap of ~1.4 eV has attracted much attention as a new class of absorption layers of solar cell. We investigated various electrical and optical properties of FAPbI3 single crystal, which was made by inverse temperature crystallization method.

  Dark current – voltage measurement was carried out, and hole mobility and hole trap density were estimated by the space-charge-limited current technique. Temperature dependence of resistance with and without light irradiation indicated the existence of two activation energies.

  Absorption coefficient of a slice of single crystal was calculated from the transmittance and reflectance data, and optical bandgap of the inside of a crystal was estimated. On the other hand, the transmittance measurement of the powder milled from a single crystal showed a different optical bandgap. It is coincided with the results which a photo-luminescence spectrum of a single crystal showed two peaks. The origins of bandgap and activation energy will be discussed.



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