Facile Synthesis and Characterization of Sulfur Doped Low Bandgap Bismuth Based Perovskites by Soluble Precursor Route
Tingli Ma a, Shyam S. Pandey a, Yuhei Ogomi a, Teresa Ripolles a, Gaurav Kapil a, Satoshi Iikubo a, Takeshi Ohta a, Murugan Vigneshwaran a, Shuzi Hayase a, Qing Shen b, Taro Toyoda b, Kenji Yoshino c, Takashi Minemoto d
a Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan, Fukuoaka, 808, Japan
b The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182, Japan
c Miyazaki University, 1-1 Gakuen, Kibanadai-nishi, Miyazaki 889-2192, Japan
d Ritsumeikan University, 1-1-1 norohigashi Kusatsu, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Murugan Vigneshwaran, 063
Publication date: 7th November 2016

Bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) are rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. Relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottle-neck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We would like to demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in-situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = Ethyl Xanthate) precursor. Color of the obtained films were clearly changed from orange to black when annealed from 80áµ’C to 120áµ’C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9.

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