Mixed Cation–halide Perovskite Solar Cells Based on Low Temperature Prepared Amorphous Metal Oxide Electron Collectors
Youhei Numata a, Atsushi Kogo a, Yoshitaka Sanehira a, Tsutomu Miyasaka a
a Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, 2258503, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Poster, Youhei Numata, 081
Publication date: 7th November 2016

Perovskite solar cells (PSCs) are one of most promising next generation solar cells due to their high conversion efficiency, low materials cost, and ease for production. After the conversion efficiency has achieved over 20%, interests of researchers gradually spread across lead-free materials, flexible device, and high durability of performance. Among them, technology to minimize the production cost is a major issue for industrialization. We have focused on a low temperature fabrication of PSC, which allows use of plastic substrates for development of flexible and low cost devices. For low temperature fabrication process, organic carrier transporting materials are generally useful. However, inorganic materials are superior in chemical stability if materials of thin compact film can be prepared by low temperature method. As a candidate of such materials, amorphous metal oxide semiconductors are promising because of their high stability and low material's cost.   We employed amorphous Nb-doped TiO2 [TiO2(Nb)] as a compact layer (CL) material and combined it with binder-free Brookite TiO2 nano-particles to prepare mesoscopic TiO2 substrate. Based on the substrate, we fabricated formamidinium (FA) and methylammonium (MA) mixed perovskite [(FAPbI3)0.85(MAPbBr3)0.15] solar cells. PSCs fabricated below 100°C and 150 °C successfully achieved conversion efficiencies of up to 15% and over 17%, respectively. Additionally, the amorphous TiO2(Nb) based device showed less hysteretic behavior in J–V curve compared to high temperature (550 °C) sintered crystalline non-doped TiO2 CL based device.

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