Stable and Enhanced Performance of Low Temperature Processed Inverted Planar Perovskite Solar Cells with CuSCN Interlayer at r-GO/Perovskite Interface
Towhid Hossain Chowdhury a b, Md.Emrul Kayesh a, Jae-Joon Lee b, Ashraful Islam a
a National Institute for Materials Science(NIMS)
b Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor
c Dongguk University
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Poster, Towhid Hossain Chowdhury, 120
Publication date: 27th October 2017

Low temperature processed Hole transport materials(HTMs) are beneficial for scalable production of inverted planar perovskite solar cells (PSCs) for wider choice of substrates. In this concern, Carbon derivative such as reduced grapheme oxide (r-GO) is a popular choice of HTM due to low toxicity, abundance in nature and low temperature one step spin-coating process. However, deposition of r-GO may result in poor overall device performance due to the low coverage on the corresponding substrates. Hence introducing an interfacial material with matched energy level between the r-GO HTM and the corresponding perovskite absorber resulting in bilayer HTM configuration may increase the overall performance of an inverted planar PSC. Here, in this work, we report copper (I) thiocyanate (CuSCN) as an efficient interlayer in low temperature processed inverted planar PSC. We have systematically optimized the thickness of CuSCN interlayer at the r-GO/Perovskite interface to enhance the stability and photovoltaic performance of low temperature processed inverted planar PSCs over a surface area of 1.02 cm2. The successful coverage of CuSCN over the uncovered areas of r-GO increases the photovoltaic performance of the PSC. Simultaneously, the r-GO/CuSCN bilayer HTM leads to better hole transportation and enhanced carrier mobility to the perovskite interface. With matched energy level, the r-GO/CuSCN bilayer completely covered the surface of ITO and successfully prevented the recombination at the interface with the perovskite absorber. The r-GO/CuSCN bilayer HTM based PSCs showed a high efficiency of 14.28%. Additionally, enhanced stability has been observed for the r-GO/CuSCN based PSCs retaining its initial efficiency after 500h light soaking.

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