Graphene-doped PEDOT:PSS as hole transport layer in stable and efficient inverted perovskite solar cells.
Carlos D. Redondo-Obispo a, Teresa S. Ripolles a, Sandra Cortijo-Campos b, Ángel Luis Álvarez a, Esteban Climent-Pascual c, Alicia de Andrés b, Carmen Coya a
a Escuela Técnica Superior de Ingeniería de Telecomunicación (ETSIT), Universidad Rey Juan Carlos, ES, C/Tulipán s/n, Madrid, Spain
b Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (CSIC), Spain., C/ Sor Juana Inés de la Cruz 3, Madrid, Spain
c Escuela Técnica Superior de Ingeniería Industrial, Universidad Politécnica de Madrid, Spain, Calle de José Gutiérrez Abascal, 2, Madrid, Spain
Online Meetups
Proceedings of Online seminar on properties of perovskite solar cells (CPPSC20)
VALÈNCIA, Spain, 2020 March 13th - 13th
Poster, Teresa S. Ripolles, 009
Publication date: 12th March 2020

The undesirable reactions from poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS), which presents hygroscopic and acid character of PSS- group, reduces drastically the stability and efficiency of inverted perovskite solar cells. We developed a facile synthesis method of graphene platelets into PEDOT:PSS solution in order to block these unstable reactions. The homogenous graphene-doped PEDOT:PSS layer show up to 10 times improvements on its conductivity, maintaining high optical transmittance. Additionally, the standard CH3NH3PbI3 film grown on graphene-doped PEDOT:PSS layer exhibits large perovskite crystallite size and a reduction of PbI2 content, leading high stability over time. The hydrophobic character of graphene probably blocks undesirable reactions hampering degradation. The inverted perovskite solar cells based on graphene-doped PEDOT:PSS as hole transport layer show better photovoltaic parameters by increasing charge extraction analyzed by impedance spectroscopy. This simple and low-cost preparation method leads to a successful candidate to synthetize effective hole transport layer to be considered in optoelectronic devices.

Funding by the Spanish Ministerio de Economía y Competitividad (MINECO) under Projects RTI2018-096918-B-C41, MAT2015-65356-C3-2-R and ENE2017-90565-REDT National Excellence Network, is acknowledged. Funding by Young Researchers R&D Project PAS2D (ref. F660) financed by Community of Madrid and Rey Juan Carlos University. Thanks to Rey Juan Carlos University under the project AYUDA PUENTE 2019. T. S. R. and C. R.-O. acknowledge the funding from Community of Madrid and European Social Fund under the Talento fellowship 2017-T2/IND-5586 and under PEJD-2018-PRE/IND-8839 Youth Employment Initiative (YEI), respectively. S. C.-C. acknowledges funding from MINECO (grant BES-2016-076440).

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