Device Simulations of Perovskite Transistors Containing Mobile Iodide
Doaa Shamalia a, Nir Tessler a
a Sara and Moshe Zisapel Nano-electronic Center, Electrical and Computer Electronics, Technion Israel Institute of Technology, Haifa, Israel
Proceedings of Device Physics Characterization and Interpretation in Perovskite and Organic Materials (DEPERO)
València, Spain, 2023 October 3rd - 5th
Organizers: Sandheep Ravishankar, Juan Bisquert and Evelyne Knapp
Oral, Doaa Shamalia, presentation 005
Publication date: 14th September 2023

Lead halide perovskites have attracted significant attention over the last decade,[1] particularly in light harvesting.[2] Since the ground-breaking works demonstrated the potential of perovskite materials for photovoltaics, the field has advanced rapidly, with record efficiencies exceeding 25% within less than a decade.[3] In parallel to the extensive study of solar cells, lead halide perovskite thin film transistors (TFTs) are being developed. Reports on perovskite TFTs show dominant ionic effects causing large hysteresis, gate voltage screening, device degradation, and lack of saturation in the current. Several attempts to minimize these effects are made, such as measurements in cryogenic conditions to reduce ionic conductivity, or pulsed mode measurements to minimize the slow ionic response. Still, most of the experimental data on perovskite TFTs lack current saturation.[4-9]

Namely, the field is still in its infancy, with the entrance barrier being the ability to control the ion-related effects. To address this ion migration phenomenon and provide physical reasoning for the various experimental reports, we present a 2D device simulation of lead-halide perovskite-based TFTs containing mobile charged species using Sentaurus Device by Synopsys®. Examining the transistor output performance for different average ion densities and scan durations. We found that the sign of the mobile specie creates a difference between electron-channel (negative channel) and hole-channel (positive channel) TFTs. Moreover, we found that the incomplete saturation is due to ions’ effect on the charge extraction through the contacts and not to channel effects (as screening etc.). Building on the importance of the JV scan protocol for solar cells, we devote significant attention to the role of the voltage scan speed.

Since, comparing electron-channel and hole-channel TFTs can help decipher the sign of the dominant mobile ion, its density, and its dynamic within the film, utilizing the same perovskite materials as in solar cells would allow researchers to improve the understanding of the mechanisms governing solar PVs and better their performance.

Shamalia, D. and N. Tessler, Device Simulations of Perovskite Transistors Containing Mobile Iodide. Submitted.

This research was supported by the Ministry of Innovation, Science and Technology Israel and the Neubauer Family Foundation.

*The opinions expressed in this report are those of the author(s) and do not necessarily reflect the views of the Neubauer Family Foundation.

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