Hysteresis processes caused by capacitance and inductor
Juan Bisquert a
a Institute of Advanced Materials (INAM), University Jaume I, Castellon, Spain
Proceedings of Device Physics Characterization and Interpretation in Perovskite and Organic Materials (DEPERO)
VALÈNCIA, Spain, 2023 October 3rd - 5th
Organizers: Sandheep Ravishankar, Juan Bisquert and Evelyne Knapp
Invited Speaker, Juan Bisquert, presentation 029
DOI: https://doi.org/10.29363/nanoge.DEPERO.2023.029
Publication date: 14th September 2023

The dynamic response of metal halide perovskite devices shows a variety of physical responses that need to be understood and classified for enhancing the performance and stability and for identifying physical behaviours that may lead to developing new applications. Hysteresis, observed in the current-voltage characteristics of electronic and ionic devices, is a phenomenon in which the shape of the curve is influenced by the speed of measurement. This phenomenon is a result of internal processes that introduce a time delay in the response to external stimuli, causing measurements to depend on past disturbances. This hysteresis effect presents significant challenges, particularly in solution-processed photovoltaic devices like halide perovskite solar cells, where it complicates the assessment of performance quality. Our goal is to classify various manifestations of hysteresis by identifying common elements. Our approach involves examining hysteresis from multiple perspectives, employing simplified models that capture fundamental response patterns. We investigate system behavior using techniques like linear sweep voltammetry, impedance spectroscopy, and the analysis of transient currents resulting from small voltage steps. Our examination uncovers two primary types of hysteresis, characterized by how current responds to rapid sweep rates: capacitive hysteresis and inductive hysteresis. These terms correspond to the dominant component in the equivalent circuit, which governs the transient time response.

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