Electron-Phonon Interactions in Halide Perovskite Semiconductors
Yoshihiko Kanemitsu a
a Institute for Chemical Research, Kyoto University
Proceedings of Emerging Light Emitting Materials 2025 (EMLEM25)
La Canea, Greece, 2025 October 8th - 10th
Organizers: Maksym Kovalenko and Grigorios Itskos
Invited Speaker, Yoshihiko Kanemitsu, presentation 010
Publication date: 7th July 2025

ABX3-type lead halide perovskites have emerged as outstanding semiconductor materials for photovoltaic and light-emitting applications, owing to their remarkable optical and electronic properties and facile fabrication via low-temperature chemical solution processes. Their ionic and soft crystal structures give rise to pronounced electron-phonon and phonon-phonon interactions, which critically influence their optoelectronic and thermal properties [1,2]. Strong electron-phonon coupling in halide perovskites has been linked to a variety of unique phenomena, including enhanced carrier masses [3], efficient anti-Stokes luminescence [4], phonon bottleneck effects in hot carriers [5], phonon-assisted luminescence [6], and laser cooling [7,8]. Electron-phonon interactions in semiconductors are discussed in terms of short-range and long-range interactions [1]. In conventional inorganic semiconductors, a strong correlation exists between these two types of coupling constants [1]. However, halide perovskites exhibit an unusual suppression of short-range interactions, preventing the formation of strongly localized polarons [9]. This distinctive behavior positions halide perovskites as unique materials from the perspective of electron-phonon interactions. This talk discusses the electron-phonon interactions in halide perovskites, summarizing our group’s research on the photophysical properties of hybrid halide perovskites.

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