Publication date: 17th July 2025
The movement of excitons – bound electron-hole pairs – and free charge carriers in semiconductors is central to the operation of optoelectronic devices. Over the past several years, time-resolved optical microscopy has emerged as a powerful experimental technique for studying the spatiotemporal dynamics of charges and excitons in emerging semiconductor materials under a variety of experimental conditions. In this talk, I will present recent progress using time-resolved photoluminescence microscopy to understand charge and exciton transport in halide perovskite materials. I will introduce the technique and its history, review successes and failures, and efforts to benchmark time-resolved microscopy data against other techniques (e.g. Hall effect, FET mobility). Finally, I will present our findings in halide perovskites, including 1) temperature-dependent transition between free carrier and exciton-dominated transport in bulk halide perovskite crystals, 2) effect of A-site cation and grain boundaries, 3) anomalous exciton transport phenomena at cryogenic temperature, and 4) exciton transport in perovskite nanocrystal solids and nanocrystal superlattices.
This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award Number DE-SC0019345.
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