Publication date: 17th July 2025
Indium antimonide (InSb) quantum dots (QDs) are of growing interest for infrared optoelectronic applications due to their narrow bandgap, strong quantum confinement, and tunable absorption in the short-wave to mid-wave infrared (SWIR–MWIR) range. Realizing high-quality, monodisperse InSb QDs with controlled surface chemistry remains challenging, particularly for solution-processed technologies.
We will discuss the critical synthetic parameters influencing the evolution of these intermediary species into well-defined QDs, including precursor chemistry, stoichiometry, and temperature-dependent processing steps. Particular attention will be given to the mechanistic aspects of nanoparticle formation and growth, and how these relate to size distribution and optical behavior.
We demonstrate the formation of intermediary nanoparticles (2–4 nm) at room temperature, which serve as precursors to high-quality InSb QDs. Through a comparison of hot-injection and heating-up methods, we identify the heating-up approach as more effective in producing materials with well-defined excitonic features. Using this method, we achieve precise size control and extend the absorption up to 2200 nm while maintaining high optical quality.
In addition, we will address the role of surface chemistry in ensuring colloidal stability and enabling integration into solution-processed device architectures. Strategies for ligand exchange and ink formulation will be presented, with a focus on their impact on electronic properties and film quality. Together, these insights contribute to a more controlled and reproducible approach for the synthesis and processing of infrared-active InSb QDs.
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