Optimizing the Optoelectronic Properties in InAs Colloidal Quantum Dot Thin Films via Post-Deposition Processing
Panagiotis Rodosthenous a b, Eleftheria Charalambous a, Nefeli Polykarpou b, Paris Papageorgis a, Sotirios Christodoulou b, Grigorios Itskos a
a Experimental Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus
b Inorganic Nanocrystals Laboratory, Department of Chemistry, University of Cyprus, Nicosia 1678, Cyprus
Proceedings of Emerging Light Emitting Materials 2025 (EMLEM25)
La Canea, Greece, 2025 October 8th - 10th
Organizers: Maksym Kovalenko and Grigorios Itskos
Poster, Panagiotis Rodosthenous, 045
Publication date: 7th July 2025

InAs Colloidal Quantum Dots (CQDs) have recently gained attention as promising low-toxicity alternatives to the more established lead- and mercury-based infrared CQDs [1]. Additionally, they have garnered increasing interest for their potential in infrared optoelectronics due to their size-tunable bandgap and solution processability [2,3,4]. Realizing the full potential of InAs CQDs in solid-state optoelectronic devices requires advances in film deposition and processability, effective surface trap passivation, and enhanced inter-dot electronic transport. In this work, we investigate the impact of post-synthetic treatments based on the ionic liquid salt, 1-ethyl-3-methylimidazolium iodide (EMII),  on the optoelectronic properties of InAs CQD films using optical spectroscopy and electro-optical techniques. Upon optimization, EMII treatment is found to improve the film morphology, surface chemistry, photoluminescence, and inter-dot electronic coupling within the CQD films.  These findings provide new insight into the role of ionic salt treatment and ligands in CQD surface engineering and offer a versatile strategy for optimizing InAs thin film materials for optoelectronic applications.

P.R. acknowledges the funding provided by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No 101034403.

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