Publication date: 17th July 2025
A major challenge in synthesizing infrared QDs has been the reliance on hazardous and heavy metal-containing materials like PbS and HgTe. InAs QDs are one of the most promising infrared emitting QDs as an alternative to heavy metal containing QDs. This study presents an improved synthesis method of InAs using tris(dimethylamino)-arsine (amino-As) along with Alane N,N-dimethylethylamine as a reducing agent and ZnCl₂ as an additive. The resulting InAs/ZnSe core/shell QDs, with a tunable shell thickness, exhibited photoluminescence around 900 nm and a photoluminescence quantum yield of up to 70%. Using these QDs, an LED was developed with an external quantum efficiency of 13.3% and a radiance of 12 Wsr⁻¹cm⁻² [1]. Long term stability of QD-LEDs under operation and also tunability of InAs QDs for longer wavelengths are two major challenges in recent years. This study presents our recent achievements on the improvement of the operation stability of QD-LEDs based on InAs and our optimization strategy for fast switching of LEDs for optical data transfer applications.
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