Tin iodide perovskites for efficient long-wavelength near-infrared LEDs
Zhan Chen a, Yu Wang a, Liuchong Fu a, Niansheng Xu a, Xianjie Liu b, Feng Gao a, Xiaoke Liu a
a Department of Physics Chemistry and Biology (IFM) Linköping University, Linköping 58183, Sweden
b Laboratory of Organic Electronics, Department of Science and Technology, Linkoping University, SE-60174, Norrkoping, Sweden.
Proceedings of Emerging Light Emitting Materials 2026 (EMLEM26)
Kallithea, Greece, 2026 September 20th - 23rd
Organizers: Grigorios Itskos and Maksym Kovalenko
Oral, Xiaoke Liu, presentation 009
Publication date: 8th July 2026

Metal halide perovskites have emerged as promising emitters for light-emitting diodes (LEDs) due to their easily tunable bandgap, narrow emission linewidth, and good charge carrier mobility.[1] Perovskite LEDs with emission peaks in the visible and short-wavelength near-infrared regions (<920 nm) have recently achieved rapid increase in external quantum efficiency (EQE).[2,3] In contrast, long-wavelength near-infrared perovskite LEDs, which offer distinct advantages in various applications such as night vision, biological tissue analysis, biomedical imaging, sensing and optical communications, are largely underdeveloped.

Environmentally friendly tin iodide perovskites, particularly cesium or cesium-rich tin iodide perovskites, have demonstrated intrinsic long-wavelength near-infrared emission (>920 nm).[4] However, realizing high-efficiency LEDs based on these materials is highly challenging due to easy oxidation of Sn2+ and fast crystallization.[5]

Here, we demonstrate a facile strategy that combines a low-temperature preheating step with an organic additive to precisely regulate grain and pinhole formation in cesium-rich tin iodide perovskite films. This approach not only suppresses Sn2+ oxidation but also enables fine-tunable optical structures within LED stacks, leading to enhancement of both photoluminescent quantum efficiency and light outcoupling efficiency. The resulting 960 nm-emitting LEDs achieve a high EQE of 9.5%, which is among the highest reported values in the long-wavelength near-infrared region (>920 nm). Our work not only offers a practical approach for enhancing the performance of tin iodide perovskites but also deepens the understanding of the relationship between film properties and LED performance.

We would like to acknowledge the financial support from the Swedish Research Council (No. 2025-04956), the Carl Trygger Foundation (No. CTS 23: 2642), the ÅForsk Foundation (No. 25-228), the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (faculty grant SFO-Mat-LiU no. 2009-00971), the European Research Council (LEAP, No. 101045098), and the European Innovation Council (SUPERLASER, No. 101162503).

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